Electron Holography for Measuring Electrostatic Potentials and Strain Fields
نویسندگان
چکیده
منابع مشابه
Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography.
Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p-n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipot...
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1 Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons and Peter Gruenberg Institute, Forschungszentrum Juelich, Juelich, Germany 2 Department of Materials, University of Oxford, Parks Road, Oxford, United Kingdom 3 Fakultaet fuer Physik & Center of Nanointegration, Universitaet Duisburg-Essen, Duisburg, Germany 4 Department of Physics and Astronomy, University of Bologna, Viale B....
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2015
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927615007758